A new approach to the calculation of the electronic structure of semiconductor superlattices in the envelope-function approximation is presented and applied to the type II InAs-GaSb system. The method allows a realistic description of the band edges of the constituent materials, and yields, therefore, accurate results for the sub-band dispersion in the direction parallel to the layers. Some novel aspects of the semiconductor-semimetal transition in InAs-GaSb are pointed out.
 

Physica B & C, 117-118 B + C 747-9, 1983.