The splitting of the spin degeneracy of the lowest conduction band of GaAs for k along (110) is calculated by k.p perturbation theory as well as by means of the self-consistent LMTO method. The magnitude and the sign of the calculated splitting agree with recent measurements of the spin precession in spin-polarized photoemission from GaAs (110) surfaces.
 

Solid State Communications, 51 491-3, 1984.