The deformation potentials d0 and d' are calculated for 22 elemental and compound semiconductors. The calculations are based on the self-consistent relativistic linear combination of muffin-tin orbitals band-structure method. It is demonstrated that perturbations caused by strain-induced changes in the nonspherical potential are significant. Chemical trends are discussed in terms of potential parameters relating to a first-principles tight-binding scheme.
 

Physical Review B, 36 2638-44, 1987.