Max-Planck-Inst. Festkoerperforsch., Stuttgart , D-7000/80, Fed. Rep. Ger.
Using d. functional theory in the local d. approxn., authors have calcd. the Schottky barrier heights, bonding properties, and electronic structure of Si-NiSi2 interface.
in: Metallization and Metal-Semiconductor Interfaces, ed. I. P. Batra. New York: Plenum 1989, 215-234.
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