Max-Planck-Inst. Festkoerperforsch., Stuttgart , D-7000/80, Germany

The band structures of GenSim strained-layer superlattices on Si and Ge substrates were calcd. The superlattices with m + n = 10 on Ge substrate direct gap semiconductors. The orthorhombic nature of the superlattice with even n and m was discussed. The optical anisotropy and its relation with the growth direction was given.
 

in: The Physics of semiconductors, vol. 2. Eds.: E. M. Anastassakis and J. D. Joannopoulos. Singapore: World Scientific (1990), 865-868 (Thessaloniko Conference Proceed.).