The authors study the influence of hydrostatic pressure and (001) tensile uniaxial strain on the valence bands of GaAs and InAs along the Gamma X, ( Gamma Z), and Gamma L directions for magnitudes of strain similar to those commonly found in strained-layer superlattice grown in the (001) direction.
 

in: The Physics of Semiconductors vol. 2. Editor(s): Anastassakis, E.M.; Joannopoulos, J.D. Singapore: World Scientific, 1990. p.1735-8 (Thessaloniki Conference Proceed.).