RESONANT PHOTOEMISSION-STUDY OF K-DERIVED VALENCE-BAND STATES IN KXC60.

Molodtsov S. L., Gutierrez A., Navas E., Domke M., Kaindl G., Merkel M., Nucker N., Fink J., Antropov V. P., Andersen O. K., Jepsen O.

Free Univ Berlin Inst Exptl Phys Arnimallee 14 D-14195 Berlin Germany
Kernforschungszentrum Karlsruhe Inst Nukl Festkorperphys D-76021 Karlsruhe Germany
Max Planck Inst Festkorperforsch D-70569 Stuttgart Germany

The electronic structure of K-doped C60 was investigated by photoemission (PE) and X-ray absorption near-edge structure (XANES) studies at the C-1s and K-2p thresholds. In addition, information on the local K-derived partial density of states in superconducting K3C60 was obtained by resonant PE at the K-2p1/2 threshold. The experimental observations support a complete charge transfer from K to C60 and we clearly observe a finite density of states at E(F). From resonant PE, occupied states with K-p, d character could be identified in the binding-energy region from 1.5 to 8 eV below, but not directly at the Fermi level. This partial-density-of-states structure agrees well with the results of our band-structure calculations based on the local-density approximation.
 

Zeitschrift fur Physik D, 92 347-351, 1993.


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