Physical Review Letters, vol.45, no.6, p. 494-7 (1980)
von Klitzing, K.; Dorda, G.; Pepper, M.
Measurements of the Hall voltage of a two-dimensional electron gas,
realized with a silicon metal-oxide- semiconductor field-effect transistor,
show that the Hall resistance at particular, experimentally well-defined
surface carrier concentrations has fixed values which depend only on the
fine-structure constant and speed of light and is insensitive to the geometry
of the device. Preliminary data are reported.