Ge donors in GaP and the role of higher band minima in impurity theory.

Altarelli M.

It is shown that the anomalously deep and nondegenerate ground state of Ge donors in GaP is better described as a deep state attached to higher X-minima of the conduction band than as a shallow one attached to the absolute minima. This is because of a very strong intervalley interaction between the higher minima at X for point-charge impurities located at the cation site.

Journal of the Physical Society of Japan, 49 169-72, 1980.

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