Substitutional donors and core excitons in many-valley semiconductors.

Altarelli M.

The shallow-deep instability of substitutional donors and core excitons is discussed, with inclusion of all intervalley interactions. Shallow levels result in Si for a screened point-charge potential, because intervalley overlap and kinetic energy balance the potential-energy terms, which are severely reduced, as substitutional sites, by Umklapp effects. Contrary to recent claims based on consideration of potential energy only, many-valley interactions cannot therefore be invoked to predict deep core-exciton levels in Si.

Physical Review Letters, 46 205-8, 1981.

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