The 'absolute' hydrostatic deformation potentials of several band states of germanium and silicon are calculated with the LMTO-ASA method. It is found that for the top valence band state dE/d ln V approximately=-8 eV. The results are compared with experimental data available. They agree with calculations based on empirical pseudopotentials provided one assumes dV0/d ln V approximately=0, where V0 is the spatially averaged pseudopotential. In order to obtain agreement with empirical tight binding results one must introduce a volume dependence of the term energies. Using the calculated deformation potentials, the dependence of the lattice constant on doping measured for n- and p-type germanium, silicon, and GaAs is discussed.
 

Physica Status Solidi B, 113 519-34, 1982.