Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlattices.

Altarelli M.

Self-consistent electronic structure calculations in the envelope-function approximation are performed for InAs-GaSb superlattices, with a three-band k.p formalism and suitable boundary conditions. The subband dispersion for k not parallel to the growth axis, realistically computed for the first time, obeys a no-crossing rule which opens small (or=180 AA is dominated by extrinsic effects.

Physical Review B, 28 842-5, 1983.

Max-Planck Institut für Festkörperforschung;
Postfach 80 06 65   D-70506 Stuttgart