The authors perform a relativistic band calculation for GaAs in an attempt to improve on values found for the energy gap in the local density approximation.
 

Proceedings of the 17th International Conference on the Physics of Semiconductors Editor(s): Chadi, J.D.; Harrison, W.A. New York, NY, USA: Springer-Verlag, 1985. p.1009-12 of xxxvi+1580 pp. 16 refs. Conference: San Francisco, CA, USA, 6-10 Aug 1984 Sponsor(s): IUPAP; Int. Center Theor. Phys.; AIP; APS; American Vacuum Soc.; et al ISBN: 0-387-96108-9.