The Landau levels in inversion and accumulation layers at the interface between GaAs and p-type AlxGa1-xAs are calculated self-consistently in the Hartree approximation. The degenerate valence band structure and the matching of the wave function at the interface are taken into account. The subband dispersion parallel to the interface has earlier been shown to be strongly non-parabolic and spin-split. This leads to a strongly non-linear B-dependence of the Landau levels. The inclusion of the magnetic field in the calculation is found to be crucial to get agreement with experimentally determined cyclotron effective masses. The calculated transition energies are partly in very good agreement with experiment. The dependence of the results on areal hole density, doping concentrations, valence band discontinuity etc. are also investigated.
 

Surface Science, 170 601-5, 1986.