Deformation potentials at the valence-band maximum in semiconductors.

Brey L., Christensen N.E., Cardona M.

The deformation potentials d0 and d' are calculated for 22 elemental and compound semiconductors. The calculations are based on the self-consistent relativistic linear combination of muffin-tin orbitals band-structure method. It is demonstrated that perturbations caused by strain-induced changes in the nonspherical potential are significant. Chemical trends are discussed in terms of potential parameters relating to a first-principles tight-binding scheme.

Physical Review B, 36 2638-44, 1987.

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