Experimental and theoretical determinations of the valence band offsets at heterojunctions between tetragonal semiconductors are reviewed. The physical mechanisms underlying the offset are illustrated on the basis of midgap level theories, in particular the dielectric midgap energy version (DME). Results obtained with the DME method for several nearly lattice-matched heterojunctions are presented and critically compared with experimental data and the results of other theoretical evaluations.
 

Journal of Vacuum Science & Technology B, 6 1285-9, 1988.