Comment on 'Spectroscopy of excited states in In0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy.

Cardona M., Christensen N.E.

Sauer et al. (Phys. Rev. B 34, 9023, 1986) have recently determined the band offsets of lattice-matched In0.53Ga0.47As-InP heterojunctions. Cardona and Christensen show that the valence-band offset found by those authors (0.254 eV) agrees with that estimated by the dielectric-midgap- point method (M. Cardona and N.E. Christensen, Phys. Rev. B 35, 6182, 1987).

Physical Review B, 37 1011-12, 1988.

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