Effects of topological distortion on the properties of silicon.

Winer K., Bose S.K.

The authors present a new hypothetical eight-atom crystalline polymorph of silicon whose calculated structural, vibrational, and electronic properties are in better agreement with those of amorphous silicon (a-Si) than the equally hypothetical ST12 (T-12) silicon polymorph. The new structure contains the essential disorder present in a-Si and, therefore, might be a useful basis for those calculations where the size of more realistic models is prohibitive.
 

Physical Review B, 38 12683-6, 1988.


Max-Planck Institut für Festkörperforschung;
Postfach 80 06 65   D-70506 Stuttgart