Calculated electronic structures and Schottky barrier heights of (111) nickel disilicide/silicon A- and B-type interfaces.

Das G. P., Bloechl P., Christensen N. E., Andersen O. K.

Max-Planck-Inst. Festkoerperforsch., Stuttgart , D-7000/80, Fed. Rep. Ger.

Using d. functional theory in the local d. approxn., authors have calcd. the Schottky barrier heights, bonding properties, and electronic structure of Si-NiSi2 interface.

in: Metallization and Metal-Semiconductor Interfaces, ed. I. P. Batra. New York: Plenum 1989, 215-234.

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