Crystal-field and configuration dependence of hopping-matrix elements for CeCu2Si2.

Gunnarsson O., Christensen N.E.

The hopping-matrix elements Vm( epsilon ) between the conduction states with energy epsilon and the different crystal-field-split 4f states m are calculated for CeCu2Si2. With use of the Anderson impurity model, the effect of this m dependence on the static T=0 K susceptibility is studied. The authors also take into account that the one-particle hopping-matrix elements entering in the f0 to f1 and f1 to f2 hopping processes are different (configuration dependence). It is concluded that for CeCu2Si2 larger hopping-matrix elements are needed for the description of thermodynamic properties than for spectroscopic properties. These results are consistent with renormalization effects, which the Coulomb interaction between the 4f and conduction electrons is expected to cause.

Physical Review B, 42 2363-7, 1990.

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