Electronic and optical properties of germanium-silicon (GenSim) superlattices.

Schmid U., Christensen N. E., Cardona M., Alouani M.

Max-Planck-Inst. Festkoerperforsch., Stuttgart , D-7000/80, Germany

The band structures of GenSim strained-layer superlattices on Si and Ge substrates were calcd. The superlattices with m + n = 10 on Ge substrate direct gap semiconductors. The orthorhombic nature of the superlattice with even n and m was discussed. The optical anisotropy and its relation with the growth direction was given.

in: The Physics of semiconductors, vol. 2. Eds.: E. M. Anastassakis and J. D. Joannopoulos. Singapore: World Scientific (1990), 865-868 (Thessaloniko Conference Proceed.).

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