LMTO and EPM calculations of strained valence bands in GaAs and InAs.

Zollner S., Schmid U., Christensen N.E., Grein C.H., Cardona M., Ley L.

The authors study the influence of hydrostatic pressure and (001) tensile uniaxial strain on the valence bands of GaAs and InAs along the Gamma X, ( Gamma Z), and Gamma L directions for magnitudes of strain similar to those commonly found in strained-layer superlattice grown in the (001) direction.

in: The Physics of Semiconductors vol. 2. Editor(s): Anastassakis, E.M.; Joannopoulos, J.D. Singapore: World Scientific, 1990. p.1735-8 (Thessaloniki Conference Proceed.).

Max-Planck Institut für Festkörperforschung;
Postfach 80 06 65   D-70506 Stuttgart