Classification of grain boundary activity in semiconductors.

Werner J. H., Christensen N. E.

Max-Planck-Inst. Festkoerperforsch., Stuttgart , W-7000/80, Germany

A classification is proposed for the three different grain boundary types which exist in semiconductors: inversion/accumulation, asym. depletion, and sym. depletion. The occurrence of inversion/accumulation boundaries in Ge and InSb is correlated with Fermi level pinning at the dielec. midgap energy which is close to the energy of the dangling bond. The correlation explains also the asym. depletion boundaries in GaP, InP and GaAs. Accumulation boundaries are predicted for n-type InAs and p-type GaSb.

in: Polycrystalline Semiconductors II, eds. J. H. Werner and H. P. Strunk. Heidelberg: Springer (1991), 145-150 (= Springer Proceedings in Physics Vol. 54).

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