Theory of FeSi2 direct gap semiconductor on Si(100).

Miglio L., Meregalli V.

Univ Milan Ist Nazl Fis Mat Via Emanueli 15 I-20126 Milan Italy
Univ Milan Dipartimento Sci Mat I-20126 Milan Italy
Max Planck Inst Festkorperforsch D-70569 Stuttgart Germany

In this article we show by theory predictions how the gap nature of beta-FeSi2 could be suitably tailored in heteroepitaxial growth on Si(100) substrates where a Si-Ge buffer layer is used to set the lattice parameter and, in turn, the amount of strain in the FeSi2 film.
© Copyright 1998 American Vacuum Society.

Journal of Vacuum Science & Technology B, 16(3) 1604-1609, 1998.

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